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SI3459DV-T1

Part No SI3459DV-T1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 60V 2.2A 6-Pin TSOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TSOP
Continuous Drain Current (ID) 2.2 A
Drain to Source Resistance 220 mΩ
Drain to Source Voltage (Vdss) -60 V
Element Configuration Single
Fall Time 12 ns
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 2 W
Min Operating Temperature -55 °C
Number of Channels 1
Rise Time 12 ns
RoHS Compliant
Turn-Off Delay Time 23 ns
Turn-On Delay Time 8 ns
Weight 19.986414 mg
Win Source Part Number 1092825-SI3459DV-T1
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI3459DV-T1 CAD Model

Description

The SI3459DV-T1 is a high-performance RF MOSFET transistor designed for use in various applications from Vishay.

  • Mounting Style: SMD (SMT)
  • Drain to Source Voltage: -60V
  • Weight: 19.986414 mg
  • Maximum Power Dissipation: 2W
  • Continuous Drain Current: 2.2A
  • Gate to Source Voltage: 20V
  • Rise and Fall Time: 12ns

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6316 $65.2640
90+ $1.3388 $120.4920
135+ $1.2970 $175.0950
185+ $1.2552 $232.2120
240+ $1.2132 $291.1680
320+ $1.0878 $348.0960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 80 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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