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Same model may have multiple batches, images only for reference.
SI3460BDV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3460BDV-T1-E3

Part No SI3460BDV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 8A 6-TSOP
Datasheet
SI3460BDV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 24nC @ 8V
Max Input Capacitance 860pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2W (Ta), 3.5W (Tc)
Maximum Rds On at Id,Vgs 27 mOhm @ 5.1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 042593-SI3460BDV-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3460BDV-T1-E3 CAD Model

Description

The SI3460BDV-T1-E3 is a MOSFET electronic component manufactured by Vishay.

  • Popularity: medium
  • Supply and Demand Status: balanced
  • Maximum Power Dissipation: 2W (Ta), 3.5W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Rds On at Id, Vgs: 27 mOhm @ 5.1A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7594 $52.7820
70+ $1.4437 $101.0590
110+ $1.3985 $153.8350
150+ $1.3534 $203.0100
195+ $1.3083 $255.1185
260+ $1.1730 $304.9800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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