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Same model may have multiple batches, images only for reference.
SI3460DV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3460DV-T1-E3

Part No SI3460DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 5.1A 6TSOP
Datasheet
SI3460DV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 1mA (Min)
Max Gate Charge 20nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 27 mOhm @ 5.1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 028434-SI3460DV-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI3460DV-T1-E3 CAD Model

Description

The Vishay SI3460DV-T1-E3 is a N-channel MOSFET technology used in power management.

  • Maximum Power Dissipation: 1.1W (Ta)
  • Continuous Drain Current: 5.1A (Ta) @ 25°C
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Maximum Rds On at Id,Vgs: 27 mOhm @ 5.1A, 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8408 $58.8560
170+ $0.6907 $117.4190
260+ $0.6687 $173.8620
360+ $0.6468 $232.8480
465+ $0.6260 $291.0900
620+ $0.5613 $348.0060
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