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Same model may have multiple batches, images only for reference.
SI3465DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3465DV-T1-GE3

Part No SI3465DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3A 6-TSOP
Datasheet
SI3465DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 5.5nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.14W (Ta)
Maximum Rds On at Id,Vgs 80 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095845-SI3465DV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3465DV-T1-GE3 CAD Model

Description

The Vishay MOSFET is a P-channel component that is designed to operate in a temperature range of -55°C to 150°C.

  • Temperature Range: -55°C to 150°C
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 3A @ 25°C
  • Maximum Rds On: 80 mOhm @ 4A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 5.5nC @ 5V
  • Maximum Gate-Source Voltage: ±20V
  • Package: 6-TSOP
  • Mounting: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.3476 $59.0920
410+ $0.2852 $116.9320
630+ $0.2763 $174.0690
865+ $0.2674 $231.3010
1,120+ $0.2585 $289.5200
1,500+ $0.2317 $347.5500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,500 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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