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Same model may have multiple batches, images only for reference.
SI3475DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3475DV-T1-GE3

Part No SI3475DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 0.95A 6-TSOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 950mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 500pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 3.2W (Tc)
Maximum Rds On at Id,Vgs 1.61 Ohm @ 900mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095852-SI3475DV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3475DV-T1-GE3 CAD Model

Description

The Vishay SI3475DV-T1-GE3 is an obsolete (EOL) P-channel MOSFET (metal-oxide-semiconductor field-effect transistor) that comes in a 6-TSOP package.

  • Drain-Source Breakdown Voltage (Max): 200V
  • Continuous Drain Current (@ Tc): 950mA
  • Maximum Rds On (@ Id,Vgs): 1.61 Ohm @ 900mA, 10V
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0374 $50.9350
60+ $1.6717 $100.3020
93+ $1.6195 $150.6135
128+ $1.5672 $200.6016
166+ $1.5150 $251.4900
221+ $1.3583 $300.1843
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50 pieces
MOQ: 25 pcs
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