The Vishay 028438-SI3493BDV-T1-E3 is a P-channel MOSFET designed for discrete semiconductor products.

• Mounting Technology: Surface Mount Technology (SMT)
• Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
• Drive Voltage (max Rds On, Min Rds On): 1.8V, 4.5V
• Drain-Source Breakdown Voltage: 20V
• Continuous Drain Current at 25°C: 8A (Tc)
• Gate-Source Threshold Voltage: 900mV @ 250μA
• Maximum Gate Charge: 43.5nC @ 5V
• Maximum Input Capacitance: 1805pF @ 10V
• Maximum Gate-Source Voltage: ±8V
• Maximum Rds On at Id,Vgs: 27.5 mOhm @ 7A, 4.5V
• Supply and Demand Status: Sufficient with a quantity of 3k pcs per package