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Same model may have multiple batches, images only for reference.
SI3499DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3499DV-T1-GE3

Part No SI3499DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 5.3A 6-TSOP
Datasheet
SI3499DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 750mV @ 250μA
Max Gate Charge 42nC @ 4.5V
Maximum Gate-Source Voltage ±5V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 23 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 042595-SI3499DV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Portable Devices
Ultra Librarian 3D Model Ultra Librarian SI3499DV-T1-GE3 CAD Model

Description

The Vishay SI3499DV-T1-GE3 is a MOSFET electronic component designed for use in industrial, power management, and portable devices.

  • Manufacturer: Vishay
  • Win Source Part Number: 042595
  • Packaging: Reel-TR
  • Mounting: SMD (SMT)
  • Polarity: P-Channel

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6073 $60.7300
235+ $0.4984 $117.1240
360+ $0.4828 $173.8080
495+ $0.4672 $231.2640
640+ $0.4516 $289.0240
860+ $0.4049 $348.2140
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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