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Same model may have multiple batches, images only for reference.
SI3499DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3499DV-T1-GE3

Part No SI3499DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 5.3A 6-TSOP
Datasheet
SI3499DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 750mV @ 250μA
Max Gate Charge 42nC @ 4.5V
Maximum Gate-Source Voltage ±5V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 23 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 042595-SI3499DV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Portable Devices

Description

The Vishay SI3499DV-T1-GE3 is a MOSFET electronic component designed for use in industrial, power management, and portable devices. The product is manufactured by Vishay and has a Win Source Part Number of 042595. The product comes with a range of specifications, including packaging in a reel-TR, SMD (SMT) mounting, and a P-Channel polarity.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
100+ $0.5258 $52.5800
235+ $0.4315 $101.4025
360+ $0.4180 $150.4800
495+ $0.4045 $200.2275
640+ $0.3910 $250.2400
860+ $0.3506 $301.5160
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 6,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Ordering Guidelines

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Shipped from HK warehouse
Expected Shipping Date
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