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Same model may have multiple batches, images only for reference.
SI3588DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3588DV-T1-GE3

Part No SI3588DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 2.5A 6-TSOP
Datasheet
SI3588DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.5A, 570mA
Maximum Rds On at Id,Vgs 80 mOhm @ 3A, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 7.5nC @ 4.5V
Maximum Power Dissipation 830mW, 83mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1095861-SI3588DV-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3588DV-T1-GE3 CAD Model

Description

The SI3588DV-T1-GE3 N and P-Channel FET is a logic level gate device designed for discrete semiconductor applications.

  • Channel Type: N and P-Channel
  • Gate Type: Logic Level
  • Application: Discrete Semiconductor
  • Package: 6-TSOP
  • Power Dissipation (N-Channel): 830mW
  • Power Dissipation (P-Channel): 83mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current (N-Channel): 2.5A
  • Continuous Drain Current (P-Channel): 570mA
  • Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
  • Maximum Gate Charge: 7.5nC @ 4.5V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Manufacturer: Vishay

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4079 $63.3555
100+ $1.1550 $115.5000
155+ $1.1192 $173.4760
215+ $1.0834 $232.9310
280+ $1.0476 $293.3280
370+ $0.9390 $347.4300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 45 pcs
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