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Same model may have multiple batches, images only for reference.
SI3805DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3805DV-T1-GE3

Part No SI3805DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.3A 6-TSOP
Datasheet
SI3805DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 330pF @ 10V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.1W (Ta), 1.4W (Tc)
Maximum Rds On at Id,Vgs 84 mOhm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 125357-SI3805DV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3805DV-T1-GE3 CAD Model

Description

The SI3805DV-T1-GE3 is a MOSFET technology component manufactured by Vishay.

  • Supply and Demand Status: Balanced
  • Product Status: Active
  • Polarity: P-Channel
  • Maximum Power Dissipation: 1.1W (Ta), 1.4W (Tc)
  • Mounting: SMD (SMT)
  • Packaging: Reel of 6-TSOP

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1640 $58.2200
865+ $0.1340 $115.9100
1,330+ $0.1305 $173.5650
1,835+ $0.1259 $231.0265
2,360+ $0.1224 $288.8640
3,160+ $0.1097 $346.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,290 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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