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IPB100N04S204ATMA1

Part No IPB100N04S204ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A TO263-3 / N-Channel 40 V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 172 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 25 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB100N
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000 pcs
Win Source Part Number 1382307-IPB100N04S204ATMA1
Ultra Librarian 3D Model Ultra Librarian IPB100N04S204ATMA1 CAD Model

Description

The IPB100N04S204ATMA1 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: OptiMOS™
  • Drain to Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 100A @ 25°C
  • Rds On (Max): 3.3mOhm @ 80A and 10V
  • Gate Charge (Qg) (Max): 172nC @ 10V
  • Mounting Type: Surface Mount
  • Package: TO-263-3, D²Pak
  • Power Dissipation: 300W
  • Operating Temperature: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $11.4253 $68.5518
13+ $9.3740 $121.8620
20+ $9.0818 $181.6360
27+ $8.7884 $237.2868
34+ $8.4962 $288.8708
46+ $7.6172 $350.3912
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,620 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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