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Same model may have multiple batches, images only for reference.
SI3851DV-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI3851DV-T1-E3

Part No SI3851DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 1.6A 6-TSOP
Datasheet
SI3851DV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 3.6nC @ 5V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 830mW (Ta)
Maximum Rds On at Id,Vgs 200 mOhm @ 1.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 097813-SI3851DV-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3851DV-T1-E3 CAD Model

Description

The Vishay 097813-SI3851DV-T1-E3 is a P-Channel MOSFET that is designed for use in discrete semiconductor products.

  • Supply and Demand Status: Balance
  • Schottky Diode: Yes
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On at Id,Vgs: 200 mOhm @ 1.8A, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: 6-TSOP

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