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Same model may have multiple batches, images only for reference.
SI3909DV-T1
Same model may have multiple batches, images only for reference.

SI3909DV-T1

Part No SI3909DV-T1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Dual MOSFETs 20V 1.8A
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TSOP
Continuous Drain Current (ID) 1.8 A
Drain to Source Breakdown Voltage 20 V
Drain to Source Resistance 200 mΩ
Element Configuration Dual
Fall Time 34 ns
Gate to Source Voltage (Vgs) 12 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Power Dissipation 1.15 W
Rise Time 34 ns
RoHS Non-Compliant
Turn-Off Delay Time 19 ns
Win Source Part Number 958578-SI3909DV-T1
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI3909DV-T1 CAD Model

Description

The Vishay MOSFET with part number 958578-SI3909DV-T1 is a Dual FET that has a continuous drain current (ID) of 1.8A.

  • FET Type: Dual FET
  • Continuous Drain Current (ID): 1.8A
  • Drain to Source Breakdown Voltage: 20V
  • Drain to Source Resistance: 200mΩ
  • Gate to Source Voltage (Vgs): 12V
  • Power Dissipation: 1.15W
  • Rise Time/Fall Time: 34ns
  • Mounting Technology: SMD (SMT)
  • Case/Package: TSOP
  • Category: Transistors - FETs, MOSFETs - RF
  • Supply and Demand Status: Shortage
  • Manufacturer: Vishay

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