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Same model may have multiple batches, images only for reference.
SI3911DV-T1-GE3
Same model may have multiple batches, images only for reference.

SI3911DV-T1-GE3

Part No SI3911DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans Mosfet P-ch 20V 1.8A 6-PIN TSOP T/r
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TSOP
Continuous Drain Current (ID) 1.8 A
Drain to Source Breakdown Voltage 20 V
Drain to Source Resistance 145 mΩ
Drain to Source Voltage (Vdss) 20 V
Element Configuration Dual
Fall Time 30 ns
Gate to Source Voltage (Vgs) 8 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 830 mW
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 6
Power Dissipation 830 mW
Radiation Hardening No
Rds On Max 145 mΩ
Rise Time 29 ns
RoHS Compliant
Turn-Off Delay Time 24 ns
Turn-On Delay Time 12 ns
Win Source Part Number 969424-SI3911DV-T1-GE3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI3911DV-T1-GE3 CAD Model

Description

The SI3911DV-T1-GE3 is a MOSFET transistor manufactured by Vishay.

  • Supply and Demand Status: Shortage
  • Applications: Power amplifiers, RF circuits, and switches
  • Maximum Power Dissipation: 830mW
  • Continuous Drain Current: 1.8A
  • Drain to Source Voltage: 20V
  • Gate to Source Voltage: 8V

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5232 $60.1680
270+ $0.4285 $115.6950
420+ $0.4158 $174.6360
575+ $0.4019 $231.0925
745+ $0.3892 $289.9540
995+ $0.3488 $347.0560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,805 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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