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SI3932DV-T1-GE3

Part No SI3932DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 3.7A 6-TSOP
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.7A
Maximum Rds On at Id,Vgs 58 mOhm @ 3.4A, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 6nC @ 10V
Max Input Capacitance 235pF @ 15V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 136813-SI3932DV-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI3932DV-T1-GE3 CAD Model

Description

The Vishay SI3932DV-T1-GE3 is a 2 N-Channel (Dual) FET with a logic level gate, designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 1.4W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 3.7A
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 6nC @ 10V
  • Maximum Input Capacitance: 235pF @ 15V
  • Maximum Rds On @ Id,Vgs: 58 mOhm @ 3.4A, 10V
  • Package: 6-TSOP
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.3448 $58.6160
410+ $0.2830 $116.0300
635+ $0.2741 $174.0535
875+ $0.2653 $232.1375
1,130+ $0.2564 $289.7320
1,510+ $0.2298 $346.9980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,780 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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