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Same model may have multiple batches, images only for reference.
SI4090DY-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SI4090DY-T1-GE3

Part No SI4090DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 19.7A 8SOIC
Datasheet
SI4090DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 19.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.3V @ 250μA
Max Gate Charge 69nC @ 10V
Max Input Capacitance 2410pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.5W (Ta), 7.8W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1095889-SI4090DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI4090DY-T1-GE3 CAD Model

Description

The SI4090DY-T1-GE3 is a MOSFET from Vishay's discrete semiconductor products category.

  • Application: Industrial power management
  • Popularity: Medium
  • Packaging: 8-SO
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 19.7A (Tc)
  • Gate-Source Threshold Voltage: 3.3V @ 250μA
  • Gate Charge (max): 69nC @ 10V
  • Input Capacitance (max): 2410pF @ 50V
  • Gate-Source Voltage (max): ±20V
  • Rds On (max) @ Id,Vgs: 10 mOhm @ 15A, 10V
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2499 $56.2455
100+ $1.0255 $102.5500
155+ $0.9935 $153.9925
210+ $0.9614 $201.8940
270+ $0.9294 $250.9380
365+ $0.8333 $304.1545
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Availability: 10,000 pieces
MOQ: 45 pcs
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