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SI4100DY-T1-GE3 Real Image SI4100DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.
SI4100DY-T1-GE3 Real Image SI4100DY-T1-GE3 Real Image
SI4100DY-T1-GE3 Real Image SI4100DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4100DY-T1-GE3

Part No SI4100DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 6.8A 8-SOIC
Datasheet
SI4100DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 600pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 6W (Tc)
Maximum Rds On at Id,Vgs 63 mOhm @ 4.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 093914-SI4100DY-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4100DY-T1-GE3 CAD Model

Description

This electronic component is a MOSFET manufactured by Vishay and has high popularity.

  • Maximum Power Dissipation: 2.5W (Ta) and 6W (Tc)
  • Supply and Demand Status: limited
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: 8-SO
  • Maximum Rds On @ Id, Vgs: 63 mOhm @ 4.4A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0770 $53.8500
100+ $1.0089 $100.8900
155+ $0.9748 $151.0940
225+ $0.9066 $203.9850
290+ $0.8725 $253.0250
360+ $0.8385 $301.8600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,346 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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