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SI4162DY-T1-GE3

Name: SI4162DY-T1-GE3
Brand: Vishay
SKU: 321663
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SI4162DY-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 19.3A 8-SOIC
Datasheet	SI4162DY-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	19.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	3V @ 250μA
Max Gate Charge	30nC @ 10V
Max Input Capacitance	1155pF @ 15V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	2.5W (Ta), 5W (Tc)
Maximum Rds On at Id,Vgs	7.9 mOhm @ 20A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SO
Dimension	8-SOIC (0.154", 3.90mm Width)
Win Source Part Number	028455-SI4162DY-T1-GE3
Popularity	Medium
Supply and Demand Status	Balance
Application Field	Used in Industrial, Power Management
Ultra Librarian 3D Model	Ultra Librarian SI4162DY-T1-GE3 CAD Model

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Description

The Vishay electronic component is a high-quality product that is designed to offer superior performance.

Supply and Demand Status: Balanced
Polarity: N-channel
Power Dissipation: 2.5W (Ta), 5W (Tc)
Drive Voltage: 4.5V, 10V
Drain-Source Breakdown Voltage: 30V
Maximum Rds On at Id, Vgs: 7.9 mOhm @ 20A, 10V
Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
155+	$0.3252	$50.4060
375+	$0.2669	$100.0875
585+	$0.2585	$151.2225
800+	$0.2502	$200.1600
1,035+	$0.2419	$250.3665
1,385+	$0.2168	$300.2680

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 121,200 pieces

MOQ: 155 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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