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Same model may have multiple batches, images only for reference.
SPD50N03S2L-06 Real Image
Same model may have multiple batches, images only for reference.

SPD50N03S2L-06

Part No SPD50N03S2L-06
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A DPAK
Datasheet
SPD50N03S2L-06 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 85μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 2530pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 6.4 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1101557-SPD50N03S2L-06
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPD50N03S2L-06 CAD Model

Description

The Infineon Technologies SPD50N03S2L-06 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 50A @ 25°C.

  • Maximum Rds On: 6.4 mOhm @ 50A and 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 68nC @ 10V
  • Maximum Input Capacitance: 2530pF @ 25V
  • Designed for: use in discrete semiconductor products
  • Mounting Type: surface-mount technology
  • Power Dissipation: 136W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Package: PG-TO252-3, TO-252-3, DPak (2 Leads + Tab), SC-63

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160+ $0.7256 $116.0960
250+ $0.7029 $175.7250
340+ $0.6802 $231.2680
440+ $0.6576 $289.3440
590+ $0.5895 $347.8050
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