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SI4164DY-T1-GE3

Part No SI4164DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 3545pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 6W (Tc)
Maximum Rds On at Id,Vgs 3.2 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028456-SI4164DY-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4164DY-T1-GE3 CAD Model

Description

The Vishay electronic component with part number 028456-SI4164DY-T1-GE3 is a high-popularity product suitable for various electronic applications.

  • Maximum Power Dissipation: 3W (Ta) and 6W (Tc)
  • Maximum Drain-Source Breakdown Voltage: 30V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1760 $52.9200
105+ $0.9649 $101.3145
165+ $0.9348 $154.2420
225+ $0.9046 $203.5350
290+ $0.8745 $253.6050
385+ $0.7840 $301.8400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 111,565 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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