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SI4174DY-T1-GE3

Part No SI4174DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 17A 8-SOIC
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 985pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028459-SI4174DY-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si4174DY
Introduction Date November 20, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian SI4174DY-T1-GE3 CAD Model

Description

The Vishay SI4174DY-T1-GE3 is a N-channel MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation: 2.5W (Ta) and 5W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 17A (Tc)
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 27nC @ 10V
  • Maximum Input Capacitance: 985pF @ 15V
  • Maximum Rds On at Id,Vgs: 9.5 mOhm @ 10A, 10V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Halogen-Free: Yes
  • ECCN: EAR99
  • Estimated EOL Date: 2024

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4107 $51.3375
300+ $0.3370 $101.1000
460+ $0.3265 $150.1900
635+ $0.3159 $200.5965
820+ $0.3054 $250.4280
1,100+ $0.2738 $301.1800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 82,530 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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