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Same model may have multiple batches, images only for reference.
SI4176DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4176DY-T1-GE3

Part No SI4176DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A 8-SOIC
Datasheet
SI4176DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 490pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.4W (Ta), 5W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 8.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 064475-SI4176DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4176DY-T1-GE3 CAD Model

Description

The Vishay SI4176DY-T1-GE3 is an N-channel MOSFET with a breakdown voltage of 30V and continuous drain current of 12A @ 25°C.

  • Package: 8-SO
  • Maximum Power Dissipation: 2.4W (Ta), 5W (Tc)
  • Maximum Rds On at Id,Vgs: 20 mOhm @ 8.3A, 10V
  • Applications: DC filtering, EMI, RFI suppression, and high pulse, DV/DT
  • Supply and Demand Status: Balanced

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