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SI4178DY-T1-GE3

Part No SI4178DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.8V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 405pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.4W (Ta), 5W (Tc)
Maximum Rds On at Id,Vgs 21 mOhm @ 8.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028460-SI4178DY-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4178DY-T1-GE3 CAD Model

Description

The Vishay SI4178DY-T1-GE3 is an N-Channel MOSFET with a power dissipation of 2.4W (Ta), 5W (Tc).

  • Packaging: Reel - TR
  • Mounting: Surface-Mount Device (SMD)
  • Drive Voltage: 4.5V, 10V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 12A (Tc)
  • Gate-Source Threshold Voltage: 2.8V @ 250μA
  • Maximum Gate-Source Voltage: ±25V
  • Maximum Rds On at Id,Vgs: 21 mOhm @ 8.4A, 10V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2025 $50.6250
605+ $0.1662 $100.5510
935+ $0.1610 $150.5350
1,285+ $0.1558 $200.2030
1,665+ $0.1506 $250.7490
2,225+ $0.1350 $300.3750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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