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SI4190ADY-T1-GE3

Part No SI4190ADY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 18.4A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.8V @ 250μA
Max Gate Charge 67nC @ 10V
Max Input Capacitance 1970pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 6W (Tc)
Maximum Rds On at Id,Vgs 8.8 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 091472-SI4190ADY-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management, Communications & Networking
Ultra Librarian 3D Model Ultra Librarian SI4190ADY-T1-GE3 CAD Model

Description

This component can be used in various applications, including industrial, power management, communications, and networking. The SI4190ADY-T1-GE3 is an N-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 18.4A @ 25°C.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 18.4A @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5860 $63.4400
90+ $1.3015 $117.1350
140+ $1.2608 $176.5120
190+ $1.2201 $231.8190
245+ $1.1794 $288.9530
330+ $1.0574 $348.9420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,450 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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