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SI4214DDY-T1-GE3

Part No SI4214DDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8.5A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.5A
Maximum Rds On at Id,Vgs 19.5 mOhm @ 8A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 660pF @ 15V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 028463-SI4214DDY-T1-GE3
Family Name Si4214DDY
ECCN EAR99
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI4214DDY-T1-GE3 CAD Model

Description

The SI4214DDY-T1-GE3 is a dual N-Channel FET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 3.1W
  • Drain-Source Breakdown Voltage: 30V
  • Gate Type: logic level gate
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Continuous Drain Current @ 25°C: 8.5A
  • Maximum Rds On: 19.5 mOhm @ 8A, 10V
  • Mounting Technology: SMD (SMT)
  • Package Size: 8-SO
  • Manufacturer: Vishay
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3060 $50.4900
400+ $0.2511 $100.4400
620+ $0.2432 $150.7840
850+ $0.2354 $200.0900
1,100+ $0.2275 $250.2500
1,475+ $0.2040 $300.9000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 52,500 pieces
MOQ: 165 pcs
Order Increment : 1 pcs
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