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HUFA75344P3

Part No HUFA75344P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 210nC @ 20V
Max Input Capacitance 3200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 285W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1044247-HUFA75344P3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUFA75344P3 CAD Model

Description

The Fairchild/ON Semiconductor 1044247-HUFA75344P3 is a through-hole MOSFET with N-Channel polarity.

  • Power Dissipation: 285W (Tc)
  • Drive Voltage: 10V
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-220AB
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 75A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 210nC @ 20V
  • Maximum Input Capacitance: 3200pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 8 mOhm @ 75A, 10V
  • Supply and Demand Status: Sufficient

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