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Same model may have multiple batches, images only for reference.
SI4368DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4368DY-T1-E3

Part No SI4368DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 17A 8-SOIC
Datasheet
SI4368DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.8V @ 250μA
Max Gate Charge 80nC @ 4.5V
Max Input Capacitance 8340pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 3.2 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 123058-SI4368DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4368DY-T1-E3 CAD Model

Description

The Vishay SI4368DY-T1-E3 is a high-quality MOSFET that is designed to provide reliable performance in a variety of applications.

  • Maximum Power Dissipation: 1.6W
  • Drain-Source Breakdown Voltage: 30V
  • Supply and Demand Status: Balanced
  • Popularity Rating: Medium
  • Polarity: N-Channel
  • Package: Reel

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8264 $63.9240
80+ $1.4987 $119.8960
120+ $1.4518 $174.2160
165+ $1.4049 $231.8085
215+ $1.3582 $292.0130
285+ $1.2176 $347.0160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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