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SI4401BDY-T1-E3 Real Image SI4401BDY-T1-E3 real image5426 SI4401BDY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.
SI4401BDY-T1-E3 Real Image SI4401BDY-T1-E3 real image5426 SI4401BDY-T1-E3 Real Image
SI4401BDY-T1-E3 Real Image SI4401BDY-T1-E3 real image5426 SI4401BDY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4401BDY-T1-E3

Part No SI4401BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 8.7A 8-SOIC
Datasheet
SI4401BDY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 8.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 55nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 14 mOhm @ 10.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 126197-SI4401BDY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4401BDY-T1-E3 CAD Model

Description

The SI4401BDY-T1-E3 is a P-Channel MOSFET manufactured by Vishay.

  • Maximum Power Dissipation: 1.5W (Ta)
  • Drain-Source Breakdown Voltage: 40V
  • Package: 8-SO
  • Popularity: Medium
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.5188 $52.7820
35+ $2.8873 $101.0555
54+ $2.7970 $151.0380
74+ $2.7068 $200.3032
96+ $2.6166 $251.1936
128+ $2.3459 $300.2752
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Availability: 9,130 pieces
MOQ: 15 pcs
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