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Same model may have multiple batches, images only for reference.
SI4411DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4411DY-T1-E3

Part No SI4411DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 9A 8-SOIC
Datasheet
SI4411DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 65nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 10 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 064488-SI4411DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4411DY-T1-E3 CAD Model

Description

The Vishay SI4411DY-T1-E3 is a P-channel MOSFET with a maximum power dissipation of 1.5W.

  • Supply and Demand Status: Limited
  • Popularity Rating: Medium
  • Technology: MOSFET
  • Polarity: P-channel
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds On @ Id,Vgs: 10 mOhm @ 13A, 10V
  • Win Source Part Number: 064488-SI4411DY-T1-E3

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