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Same model may have multiple batches, images only for reference.
SI4421DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4421DY-T1-E3

Part No SI4421DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 10A 8-SOIC
Datasheet
SI4421DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 800mV @ 850μA
Max Gate Charge 125nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 8.75 mOhm @ 14A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1095935-SI4421DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4421DY-T1-E3 CAD Model

Description

The Vishay SI4421DY-T1-E3 is a P-channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 10A at 25°C.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 10A
  • Maximum Rds On: 8.75 mOhm @ 14A, 4.5V
  • Gate-Source Threshold Voltage: 800mV @ 850μA
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Gate Charge: 125nC @ 4.5V
  • Mounting Type: Surface Mountable
  • Package: 8-SO
  • Suitable For: power management, battery protection, and load switching

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Quantity Unit Price Ext. Price
35+ $1.7628 $61.6980
80+ $1.4464 $115.7120
125+ $1.4012 $175.1500
175+ $1.3560 $237.3000
225+ $1.3108 $294.9300
295+ $1.1753 $346.7135
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