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Same model may have multiple batches, images only for reference.
SI4421DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4421DY-T1-GE3

Part No SI4421DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 10A 8SO  /  P-Channel 20 V 10A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
Datasheet
SI4421DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 8.75mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 850µA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 4.5 V
Vgs (Max) ±8V
Power Dissipation (Max) 1.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SI4421
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SI4421DY-T1-GE3TR,SI4421DY-T1-GE3DKR,SI4421DY-T1-GE3-ND,SI4421DY-T1-GE3CT
Standard Package 2,500
Win Source Part Number 976596-SI4421DY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4421DY-T1-GE3 CAD Model

Description

The SI4421DY-T1-GE3 is a P-Channel MOSFET transistor from Vishay Siliconix's TrenchFET® series.

  • Maximum Drain to Source Voltage: 20 V
  • Continuous Drain Current: 10A (Ta)
  • Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 850µA
  • Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
  • Vgs (Max): ±8V
  • Power Dissipation: 1.5W (Ta)
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Mounting Technology: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5650 $62.6000
90+ $1.2844 $115.5960
140+ $1.2439 $174.1460
195+ $1.2035 $234.6825
250+ $1.1631 $290.7750
335+ $1.0430 $349.4050
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