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SI4430BDY-T1-E3

Part No SI4430BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 30V 14A 8-Pin SOIC N T/R / MOSFET N-CH 30V 14A 8-SOIC
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 36nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028484-SI4430BDY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name Si4430BDY
Introduction Date December 07, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SI4430BDY-T1-E3 CAD Model

Description

The Vishay Si4430BDY-T1-E3 is a N-channel MOSFET transistor that is ideal for use in a wide range of electronic applications.

  • Drive Voltage: up to 4.5V and a minimum Rds On of 10V
  • Power Dissipation: 1.6W (Ta)
  • Continuous Drain Current: 14A (Ta) @ 25°C
  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 36nC @ 4.5V
  • Package: 8-SOIC package, 0.154" (3.90mm) in width
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0015 $60.0900
145+ $0.8218 $119.1610
220+ $0.7962 $175.1640
300+ $0.7704 $231.1200
390+ $0.7447 $290.4330
520+ $0.6677 $347.2040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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