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Same model may have multiple batches, images only for reference.
SI4434DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4434DY-T1-E3

Part No SI4434DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 250-V (D-S) MOSFET
Datasheet
SI4434DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Series TrenchFET
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 250V
Current - Continuous Drain (Id) @ 25°C 2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 50nC @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.56W (Ta)
Rds On (Maximum) @ Id, Vgs 155 mOhm @ 3A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 8-SO
Package 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1249077-SI4434DY-T1-E3
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Limited
Family Name Si4434DY
Introduction Date November 18, 2003
ECCN EAR99
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian SI4434DY-T1-E3 CAD Model

Description

The Si4434DY-T1-E3 is a N-channel MOSFET transistor that belongs to the TrenchFET series from Vishay.

  • Power Dissipation: 1.56W (Ta)
  • Drain-Source Voltage: 250V
  • Gate-Source Voltage: +/-20V
  • Gate Threshold Voltage: 4V @ 250μA
  • Continuous Drain Current: 2.1A (Ta)
  • On-Resistance: 155mOhm @ 3A and 10V gate-source voltage
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Applications: Discrete semiconductor products

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Quantity Unit Price Ext. Price
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36+ $2.7820 $100.1520
56+ $2.6880 $150.5280
80+ $2.5001 $200.0080
104+ $2.4061 $250.2344
130+ $2.3121 $300.5730
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