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SI4435DY-TI-A-E3

Part No SI4435DY-TI-A-E3
Manufacturer Vishay
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 189886-SI4435DY-TI-A-E3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4435DY-TI-A-E3 CAD Model

Description

The SI4435DY-TI-A-E3 is a P-Channel MOSFET manufactured by Vishay. This MOSFET is designed for various power management and switching applications, providing efficient performance and compact size. It's part of Vishay's extensive line of MOSFETs, known for their reliability and robustness.

Applications:

  • Load Switching: Used in electronic circuits for efficient switching of loads.
  • Power Management: Applied in power supplies and DC-DC converters to regulate power efficiently.
  • Battery Management: Suitable for use in battery charging and discharging circuits.
  • Motor Control: Utilized in low-power motor control applications.

Features:

  • P-Channel MOSFET: Simplifies integration into various circuit designs.
  • Low On-Resistance (RDS(on)): Minimizes power loss, leading to increased efficiency.
  • Low Gate Charge (Qg): Enables faster switching speeds and reduces driver losses.
  • Surface Mount Package: Suitable for automated assembly and compact product designs.
  • Halogen-Free: Meets environmental regulations for hazardous substances.

Benefits:

  • High Efficiency: Low RDS(on) ensures minimal power dissipation, resulting in higher efficiency.
  • Fast Switching: Low gate charge allows for rapid switching, improving performance in high-frequency applications.
  • Compact Design: The surface mount package enables smaller and more compact circuit designs.
  • Reliable Performance: Vishay MOSFETs are well-regarded for their dependable and consistent operation.

Technical Specifications:

The SI4435DY-TI-A-E3 typically features a drain-source voltage (VDS) rating of -30V and a continuous drain current (ID) rating that varies depending on the specific conditions, typically around -4.7A. The RDS(on) is typically around 55 mΩ at VGS = -10V. The device is packaged in a PowerPAK® SO-8. For detailed specifications and application guidelines, refer to the official datasheet.

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