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SI4464DY-T1-E3 Real Image SI4464DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.
SI4464DY-T1-E3 Real Image SI4464DY-T1-E3 Real Image
SI4464DY-T1-E3 Real Image SI4464DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4464DY-T1-E3

Part No SI4464DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 1.7A 8-SOIC
Datasheet
SI4464DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 240 mOhm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 064494-SI4464DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4464DY-T1-E3 CAD Model

Description

The SI4464DY-T1-E3 is a MOSFET component that belongs to the family of discrete semiconductor products.

  • Manufacturer: Vishay
  • Popularity: Medium
  • Maximum Rds On: 240 mOhm @ 2.2A, 10V
  • Continuous Drain Current: 1.7A (Ta) @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8799 $61.5930
160+ $0.7220 $115.5200
250+ $0.6995 $174.8750
345+ $0.6768 $233.4960
445+ $0.6543 $291.1635
595+ $0.5867 $349.0865
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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