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Same model may have multiple batches, images only for reference.
SI4465ADY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4465ADY-T1-E3

Part No SI4465ADY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 8SOIC
Datasheet
SI4465ADY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 85nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 3W (Ta), 6.5W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 14A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028498-SI4465ADY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian SI4465ADY-T1-E3 CAD Model

Description

The Vishay SI4465ADY-T1-E3 is a P-channel MOSFET that is designed for use in electronic circuits.

  • Mounting Technology: Surface Mount Technology (SMT)
  • Power Dissipation: 3W (Ta), 6.5W (Tc)
  • Drive Voltage: 1.8V, 4.5V (max Rds on, min Rds on)
  • Drain-Source Breakdown Voltage: 8V
  • Maximum Rds on: 9 mOhm @ 14A, 4.5V
  • Series: SI4465
  • Popularity Rating: High
  • Package: 2,500

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4428 $50.9220
245+ $0.4143 $101.5035
375+ $0.4000 $150.0000
540+ $0.3714 $200.5560
705+ $0.3571 $251.7555
875+ $0.3429 $300.0375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 48,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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