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FDT461N

Part No FDT461N
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 0.54A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 4nC @ 10V
Max Input Capacitance 74pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.13W (Ta)
Maximum Rds On at Id,Vgs 2 Ohm @ 540mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 1038461-FDT461N
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDT461N CAD Model

Description

The Fairchild/ON Semiconductor 1038461-FDT461N is an N-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 540mA at 25°C. Fairchild/ON Semiconductor 1038461-FDT461N is a product by Fairchild/ON Semiconductor.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 540mA @ 25°C
  • Maximum Rds on @ Id,Vgs: 2 Ohm @ 540mA, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 4nC @ 10V
  • Maximum Input Capacitance: 74pF @ 25V
  • Package: SOT-223-4
  • Operating Temperature: -55°C to 150°C (TJ)
  • Status: obsolete (EOL)

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