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Same model may have multiple batches, images only for reference.
SI4480DY-T1 Real Image
Same model may have multiple batches, images only for reference.

SI4480DY-T1

Part No SI4480DY-T1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET; N-Channel; 0.026 Ohms (Typ.) @ 10 V, 0.030 Ohms (Typ.) @ 6.0 V; 6 A
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SO
Continuous Drain Current (ID) 6 A
Current Rating 6 A
Drain to Source Breakdown Voltage 80 V
Drain to Source Resistance 35 mΩ
Drain to Source Voltage (Vdss) 80 V
Element Configuration Single
Fall Time 22 ns
Gate to Source Voltage (Vgs) 20 V
Height 1.55 mm
Length 5 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 2.5 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Channels 1
Number of Elements 1
Number of Pins 8
Power Dissipation 2.5 W
Rise Time 12.5 ns
RoHS Non-Compliant
Turn-Off Delay Time 52 ns
Turn-On Delay Time 12.5 ns
Weight 186.993455 mg
Width 4 mm
Win Source Part Number 1092856-SI4480DY-T1
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI4480DY-T1 CAD Model

Description

The SI4480DY-T1 is a single element MOSFET transistor with a drain to source voltage (Vdss) of 80 V and a continuous drain current (ID) of 6 A from Vishay.

  • Power Dissipation: 2.5 W
  • Rise Time: 12.5 ns
  • Fall Time: 22 ns
  • Mounting Type: surface mount
  • Case/Package: SO
  • Popularity: low
  • Supply and Demand: shortage
  • Maximum Operating Temperature: 150 °C
  • RoHS: non-compliant
  • Turn-On Delay Time: 12.5 ns
  • Turn-Off Delay Time: 52 ns
  • Drain to Source Resistance: 35 mΩ
  • Gate to Source Voltage (Vgs): 20 V

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