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SI4486EY-T1-GE3

Name: SI4486EY-T1-GE3
Brand: Vishay
SKU: 726895
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	SI4486EY-T1-GE3
Manufacturer	Vishay
Catalog	FETs - Single
Description	MOSFET N-CH 100V 5.4A 8-SOIC
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay Siliconix
Packaging	Tape and Reel
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	100V
Id - Continuous Drain Current	5.4A
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Maximum) at Id, Vgs	25mOhm at 7.9A, 10V
Gate Source Voltage(th) (Maximum) at Id	2V at 250μA (Minimum)
Gate Charge (Qg) (Maximum) at Vgs	44nC at 10V
Gate Source Voltage (Maximum)	±20V
Power Dissipation (Maximum)	1.8W
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	SMD
Supplier Device Package	8-SO
Manufacturer Package	8-SOIC
Manufacturer Pack Quantity	2,500
MSL Level	1 (Unlimited)
Win Source Part Number	726895-SI4486EY-T1-GE3
Popularity	Low
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian SI4486EY-T1-GE3 CAD Model

Alternative Products

Description

The SI4486EY-T1-GE3 MOSFET is a high-quality, reliable component that is ideal for use in a wide range of electronic devices from Vishay Siliconix.

Vds - Drain-Source Breakdown Voltage: 100V
Continuous Drain Current: 5.4A
Rds On (Maximum) @ Id, Vgs: 25mOhm @ 7.9A, 10V
Package: 8-SO package
Packaging: reel - TR
Supply and Demand Status: balanced
Manufacturer Pack: 2,500 transistors
MSL Level: 1 (Unlimited)
Gate Charge (Qg) (Maximum) @ Vgs: 44nC @ 10V
Gate Source Voltage (Maximum): ±20V

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