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Same model may have multiple batches, images only for reference.
SI4501ADY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4501ADY-T1-GE3

Part No SI4501ADY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V/8V 8-SOIC
Datasheet
SI4501ADY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel, Common Drain
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V, 8V
Continuous Drain Current at 25°C 6.3A, 4.1A
Maximum Rds On at Id,Vgs 18 mOhm @ 8.8A, 10V
Gate-Source Threshold Voltage 1.8V @ 250μA
Max Gate Charge 20nC @ 5V
Maximum Power Dissipation 1.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 133393-SI4501ADY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4501ADY-T1-GE3 CAD Model

Description

This electronic component is an obsolete (EOL) N and P-channel, common drain FET manufactured by Vishay.

  • Popularity: Medium
  • Supply and Demand Status: Limited
  • FET Feature: Logic Level Gate
  • Drain-Source Breakdown Voltage: 30V or 8V
  • Continuous Drain Current @ 25°C: 6.3A or 4.1A
  • Maximum Power Dissipation: 1.3W
  • Gate-Source Threshold Voltage: 1.8V @ 250μA
  • Max Gate Charge: 20nC @ 5V
  • Maximum Rds On @ Id,Vgs: 18 mOhm @ 8.8A, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: 8-SO

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8016 $60.1200
180+ $0.6578 $118.4040
275+ $0.6373 $175.2575
375+ $0.6167 $231.2625
485+ $0.5961 $289.1085
650+ $0.5345 $347.4250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,065 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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