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Same model may have multiple batches, images only for reference.
SI6969DQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6969DQ-T1-GE3

Part No SI6969DQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 8TSSOP
Datasheet
SI6969DQ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Maximum Rds On at Id,Vgs 34 mOhm @ 4.6A, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 40nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 046875-SI6969DQ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6969DQ-T1-GE3 CAD Model

Description

The SI6969DQ-T1-GE3 is a dual P-channel logic level gate FET from Vishay.

  • Drain-Source Breakdown Voltage: 12V
  • Maximum Rds On @ Id,Vgs: 34 mOhm @ 4.6A, 4.5V
  • Maximum Power Dissipation: 1.1W
  • Package: 8-TSSOP package
  • Applications: Suitable for use in applications such as power management, load switching, and battery protection.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3938 $62.7210
105+ $1.1437 $120.0885
160+ $1.1079 $177.2640
220+ $1.0722 $235.8840
280+ $1.0364 $290.1920
375+ $0.9292 $348.4500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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