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SI4511DY-T1-GE3

Part No SI4511DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 7.2A 8-SOIC
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7.2A, 4.6A
Maximum Rds On at Id,Vgs 14.5 mOhm @ 9.6A, 10V
Gate-Source Threshold Voltage 1.8V @ 250μA
Max Gate Charge 18nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1095963-SI4511DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4511DY-T1-GE3 CAD Model

Description

The Vishay SI4511DY-T1-GE3 is an N and P-channel FET with a logic level gate.

  • Mounting: 8-SO
  • Power Dissipation: 1.1W (Max)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 7.2A and 4.6A
  • Gate-Source Threshold Voltage: 1.8V @ 250μA
  • Maximum Gate Charge: 18nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 14.5 mOhm @ 9.6A, 10V
  • Category: Discrete semiconductor products
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9504 $52.2720
115+ $0.8903 $102.3845
175+ $0.8602 $150.5350
250+ $0.8000 $200.0000
325+ $0.7700 $250.2500
410+ $0.7399 $303.3590
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,457 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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