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SPB80P06P G

Part No SPB80P06P G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 80A TO-263
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 5.5mA
Max Gate Charge 173nC @ 10V
Max Input Capacitance 5033pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 340W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 64A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 125837-SPB80P06P G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB80P06P G CAD Model

Description

The SPB80P06P G is a P-channel MOSFET manufactured by Infineon Technologies.

  • Maximum Power Dissipation: 340W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 80A (Tc) @ 25°C
  • Maximum Rds On: 23 mOhm @ 64A, 10V
  • Design: discrete semiconductor products
  • Popularity: Medium
  • Supplied: reel-TR packaging
  • Mounting Style: SMD (SMT)
  • Gate-Source Threshold Voltage: 4V @ 5.5mA
  • Maximum Gate Charge: 173nC @ 10V
  • Maximum Input Capacitance: 5033pF @ 25V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.5640 $53.4600
30+ $3.3384 $100.1520
47+ $3.2256 $151.6032
67+ $3.0000 $201.0000
87+ $2.8873 $251.1951
109+ $2.7745 $302.4205
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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