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Same model may have multiple batches, images only for reference.
SI4542DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4542DY-T1-E3

Part No SI4542DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Maximum Rds On at Id,Vgs 25 mOhm @ 6.9A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 50nC @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 130955-SI4542DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian SI4542DY-T1-E3 CAD Model

Description

The SI4542DY-T1-E3 is an N and P-channel FET from Vishay that comes in an 8-SO package.

  • FET Feature: Logic Level Gate
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Threshold Voltage: 1V @ 250μA (Min)
  • Max Gate Charge: 50nC @ 10V
  • Maximum Rds On @ Id, Vgs: 25 mOhm @ 6.9A, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Limited
  • Used In: Power management applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.2618 $51.0510
470+ $0.2149 $101.0030
725+ $0.2081 $150.8725
995+ $0.2014 $200.3930
1,285+ $0.1947 $250.1895
1,720+ $0.1746 $300.3120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 460 pieces
MOQ: 195 pcs
Order Increment : 1 pcs
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