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Same model may have multiple batches, images only for reference.
IPA028N08N3 G Infineon Technologies
Same model may have multiple batches, images only for reference.

IPA028N08N3 G

Part No IPA028N08N3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 89A TO220-3
Datasheet
IPA028N08N3 G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 270μA
Max Gate Charge 206nC @ 10V
Max Input Capacitance 14200pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 2.8 mOhm @ 89A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 129927-IPA028N08N3 G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA028N08N3 G CAD Model

Description

The Infineon IPA028N08N3 G is an N-channel MOSFET transistor with a drain-source breakdown voltage of 80V and a continuous drain current of 89A (Tc). It has a maximum Rds On of 2.8 mOhm @ 89A and 10V and a gate-source threshold voltage of 3.5V @ 270μA. The maximum gate charge is 206nC @ 10V, and the maximum input capacitance is 14200pF @ 40V. This transistor is suitable for use in discrete semiconductor products.

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