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Same model may have multiple batches, images only for reference.
SI4542DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4542DY-T1-GE3

Part No SI4542DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 8-SOIC
Datasheet
SI4542DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Maximum Rds On at Id,Vgs 25 mOhm @ 6.9A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 50nC @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 129563-SI4542DY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian SI4542DY-T1-GE3 CAD Model

Description

The Vishay SI4542DY-T1-GE3 is an obsolete (EOL) N and P-channel logic level gate FET transistor.

  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On: 25 mOhm @ 6.9A and 10V
  • Gate-Source Threshold Voltage: 1V @ 250μA (Min)
  • Maximum Gate Charge: 50nC @ 10V
  • Package: 8-SO
  • Mounting: SMD (SMT)
  • Temperature Range: -55°C to 150°C (TJ)
  • Suitable for: Power management

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8954 $66.3390
75+ $1.5558 $116.6850
115+ $1.5073 $173.3395
160+ $1.4588 $233.4080
205+ $1.4103 $289.1115
275+ $1.2636 $347.4900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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