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Same model may have multiple batches, images only for reference.
SI4561DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4561DY-T1-E3

Part No SI4561DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 40V 6.8A 8-SOIC
Datasheet
SI4561DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 6.8A, 7.2A
Maximum Rds On at Id,Vgs 35.5 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 640pF @ 20V
Maximum Power Dissipation 3W, 3.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 042602-SI4561DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4561DY-T1-E3 CAD Model

Description

This electronic component is manufactured by Vishay and has a Win Source Part Number of 042602-SI4561DY-T1-E3.

  • Packaging: Reel
  • Mounting: SMD (SMT)
  • FET Type: N and P-Channel
  • FET Feature: Logic level gate
  • Category: Discrete semiconductor products
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: 8-SO
  • Maximum Power Dissipation: 3W, 3.3W
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 6.8A, 7.2A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Max Gate Charge: 20nC @ 10V
  • Max Input Capacitance: 640pF @ 20V
  • Maximum Rds On @ Id, Vgs: 35.5 mOhm @ 5A, 10V
  • Supply and Demand Status: Limited

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