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Same model may have multiple batches, images only for reference.
SI4569DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4569DY-T1-GE3

Part No SI4569DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 7.6A, 7.9A
Rds On (Max) @ Id, Vgs 27mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 855pF @ 20V
Power - Max 3.1W, 3.2W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number SI4569
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278451-SI4569DY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4569DY-T1-GE3 CAD Model

Description

The Vishay Siliconix 1278451-SI4569DY-T1-GE3 is a high-performance N and P-channel MOSFET transistor array that is designed for use in various electronic applications.

  • Drain to Source Voltage: 40V
  • Continuous Drain Current: 7.6A and 7.9A
  • Maximum Rds On: 27mOhm @ 6A and 10V
  • Package: 8-SOIC (0.154", 3.90mm Width)

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