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Same model may have multiple batches, images only for reference.
SI4618DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4618DY-T1-E3

Part No SI4618DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8A 8-SOIC
Datasheet
SI4618DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A, 15.2A
Maximum Rds On at Id,Vgs 17 mOhm @ 8A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 1535pF @ 15V
Maximum Power Dissipation 1.98W, 4.16W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 064497-SI4618DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4618DY-T1-E3 CAD Model

Description

The SI4618DY-T1-E3 is a 2 N-channel half-bridge MOSFET manufactured by Vishay.

  • Popularity: Medium
  • Supply and demand status: Limited
  • Application: High-frequency switching
  • Maximum drain-source breakdown voltage: 30V
  • Feature: Low gate charge and input capacitance
  • Suitable for: High-efficiency power conversion
  • Suitable for applications: Power supplies, motor drives, and lighting systems

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7842 $62.4470
80+ $1.4640 $117.1200
125+ $1.4183 $177.2875
170+ $1.3725 $233.3250
220+ $1.3268 $291.8960
295+ $1.1896 $350.9320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,267 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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