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Same model may have multiple batches, images only for reference.
SI4622DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4622DY-T1-E3

Part No SI4622DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8A 8-SOIC
Datasheet
SI4622DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 16 mOhm @ 9.6A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 2458pF @ 15V
Maximum Power Dissipation 3.3W, 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1095973-SI4622DY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI4622DY-T1-E3 CAD Model

Description

The Vishay manufactured 2 N-Channel (Dual) FET with Win Source Part Number 1095973-SI4622DY-T1-E3 is a standard FET.

  • Maximum Power Dissipation: 3.3W and 3.1W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 60nC @ 10V
  • Maximum Rds On: 16 mOhm @ 9.6A, 10V
  • Ideal Use: Industrial and power management applications
  • Mounting: Surface-mount device
  • Package: 8-SO
  • Temperature Range: -55°C to 150°C (TJ)
  • Win Source Part Number: 1095973-SI4622DY-T1-E3
  • Status: Obsolete (EOL)

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58+ $5.0000 $290.0000
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