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IRLHS6342TRPBF

Part No IRLHS6342TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.7A PQFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.7A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.1V @ 10μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 1019pF @ 25V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.1W (Ta)
Maximum Rds On at Id,Vgs 15.5 mOhm @ 8.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-PQFN (2x2)
Dimension 6-PowerVDFN
Win Source Part Number 1047547-IRLHS6342TRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLHS6342TRPBF CAD Model

Description

The Infineon Technologies IRLHS6342TRPBF MOSFET is a N-channel polarity, surface-mount device with a drain-source breakdown voltage of 30V and a continuous drain current of 8.7A @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8.7A @ 25°C
  • Power Dissipation: 2.1W (Ta)
  • Maximum Rds On: 15.5 mOhm @ Id,Vgs of 8.5A, 4.5V
  • Package: 6-PQFN (2x2)
  • Gate-Source Threshold Voltage: 1.1V @ 10μA
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Input Capacitance: 1019pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2904 $51.6160
95+ $1.0588 $100.5860
150+ $1.0258 $153.8700
205+ $0.9927 $203.5035
265+ $0.9596 $254.2940
350+ $0.8603 $301.1050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,730 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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